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  1. Diffraction contrast analysis of two-dimensional defects present in silicon after annealing.G. R. Booker & W. J. Tunstall - 1966 - Philosophical Magazine 13 (121):71-83.
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  • The orientation dependence of stacking-fault nucleation in silicon.K. V. Ravi - 1975 - Philosophical Magazine 31 (2):405-410.
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