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  1. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour.B. A. Joyce, R. R. Bradley & G. R. Booker - 1967 - Philosophical Magazine 15 (138):1167-1187.
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  • (1 other version)A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques.G. R. Booker & B. A. Joyce - 1966 - Philosophical Magazine 14 (128):301-315.
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  • (1 other version)Growth of epitaxial silicon layers by vacuum evaporation.G. R. Booker & B. A. Unvala - 1965 - Philosophical Magazine 11 (109):11-30.
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  • Perfection of Expitaxial Silicon Layers Grown by the Pyrolysis of Silane.G. R. Booker, B. A. Joyce & R. R. Bradley - 1964 - Philosophical Magazine 10 (108):1087-1091.
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  • Microplasma breakdown at stair-rod dislocations in silicon.H. J. Queisser & A. Goetzberger - 1963 - Philosophical Magazine 8 (90):1063-1066.
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  • (1 other version)Growth of epitaxial silicon layers by vacuum evaporation.B. A. Unvala & G. R. Booker - 1964 - Philosophical Magazine 9 (100):691-701.
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  • A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods.B. A. Joyce & R. R. Bradley - 1966 - Philosophical Magazine 14 (128):289-299.
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  • The epitaxial deposition of silicon on quartz.R. W. Bicknell, J. M. Charig, B. A. Joyce & D. J. Stirland - 1964 - Philosophical Magazine 9 (102):965-978.
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