Abstract

FinFEET nanotransistors are field-effect nanotransistors (metal-oxide-semiconductor) that are made on asubstrate. The gate is located on two, three, or four sides of the channel or is wrapped. The channel forms adouble gate structure. These devices are given the general name "finfets" because the source/drain region formsfins on the silicon surface. FinFET devices, compared to flat technology and using nanowires in the structureand (complementary metal oxide and semiconductor), < a i=8>have significantly faster switching and highercurrent density.Due to the reduction of the scale of semiconductor components and integrated circuits to thenanometer range, in the FinFET nanotransistor, the reduction of scale causes more short channel effects, lessgate control, an exponential increase in leakage currents, severe process changes, and power densities tobecome unmanageable. The connection between the carbon and metal nanotubes used to connect the sourceand the drain forms the Schottky barrier (SB) in a FinFET nanotransistor. The formation of Schottky barriers inthe source and drain of a transistor causes a significant decrease in the drain current of FinFET nanotransistors.